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List of goods and technology referred to in Articles 1f(1) and 1fa(1) Part A General Notes, Acronyms and Abbreviations, and Definitions in Annex I to Regulation (EU) 2021/821 apply to this Annex, with the exception of “Part I – General Notes, Acronyms and Abbreviations, and Definitions, General Notes to Annex I, point 2”. Definitions of Terms used in the Common Military List (CML) of the European Union (C/2024/1945) apply to this Annex. Without prejudice to Article 1m of this Regulation, non-controlled items containing one or more components listed in this Annex are not subject to the controls under Articles 1f(1) and 1fa(1) of this Regulation. Category I – Electronics

X.A.I.001 Electronic devices and components.

a. “Microprocessor microcircuits”, “microcomputer microcircuits”, and microcontroller microcircuits having any of the following: 1. A performance speed of 5 GigaFLOPS or more and an arithmetic logic unit with an access width of 32 bit or more; 2. A clock frequency rate exceeding 25 MHz; or 3. More than one data or instruction bus or serial communication port that provides a direct external interconnection between parallel “microprocessor microcircuits” with a transfer rate of 2,5 Mbyte/s; b. Storage integrated circuits, as follows: 1. Electrically erasable programmable read-only memories (EEPROMs) with a storage capacity; a. Exceeding 16 Mbits per package for flash memory types; or b. Exceeding either of the following limits for all other EEPROM types: 1. Exceeding 1 Mbit per package; or 2. Exceeding 256 kbit per package and a maximum access time of less than 80 ns; 2. Static random access memories (SRAMs) with a storage capacity: a. Exceeding 1 Mbit per package; or b. Exceeding 256 kbit per package and a maximum access time of less than 25 ns; c. Analogue-to-digital converters having any of the following: 1. A resolution of 8 bit or more, but less than 12 bit, with an output rate greater than 200 Mega Samples Per Second (MSPS); 2. A resolution of 12 bit with an output rate greater than 105 Mega Samples per Second (MSPS); 3. A resolution of more than 12 bit but equal to or less than 14 bit with an output rate greater than 10 Mega Samples per Second (MSPS); or 4. A resolution of more than 14 bit with an output rate greater than 2,5 Mega Samples Per Second (MSPS); d. Field programmable logic devices having a maximum number of single-ended digital input/outputs between 200 and 700; e. Fast Fourier Transform (FFT) processors having a rated execution time for a 1 024 point complex FFT of less than 1 ms; f. Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: 1. More than 144 terminals; or 2. A typical basic propagation delay time of less than 0,4 ns; g. Traveling-wave “vacuum electronic devices”, pulsed or continuous wave, as follows: 1. Coupled cavity devices, or derivatives thereof; 2. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having any of the following: a. An “instantaneous bandwidth” of half an octave or more and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,2 ; or b. An “instantaneous bandwidth” of less than half an octave; and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,4 ; h. Flexible waveguides designed for use at frequencies exceeding 40 GHz; i. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having either of the following: 1. A carrier frequency exceeding 1 GHz; or 2. A carrier frequency of 1 GHz or less; and a. A “frequency side-lobe rejection” exceeding 55 dB; b. A product of the maximum delay time and bandwidth (time in μs and bandwidth in MHz) of more than 100; or c. A dispersive delay of more than 10 μs; Technical Note: For the purpose of X.A.I.001.i “Frequency side-lobe rejection” is the maximum rejection value specified in data sheet.

j. “Cells” as follows: 1. “Primary cells” having an “energy density” of 550 Wh/kg or less at 293 K (20 oC); 2. “Secondary cells” having an “energy density” of 350 Wh/kg or less at 293 K (20 oC); Note: X.A.I.001.j does not control batteries, including single cell batteries. Technical Notes: 1. For the purpose of X.A.I.001.j energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours (Ah) divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms

2. For the purpose of X.A.I.001.j, a “cell” is defined as an electrochemical device, which has positive and negative electrodes, and electrolyte, and is a source of electrical energy. It is the basic building block of a battery 3. For the purpose of X.A.I.001.j.1, a “primary cell” is a “cell” that is not designed to be charged by any other source 4. For the purpose of X.A.I.001.j.2, a “secondary cell” is a “cell” that is designed to be charged by an external electrical source.

k. “Superconductive” electromagnets or solenoids specially designed to be fully charged or discharged in less than one minute, having all of the following: Note: X.A.I.001.k does not control “superconductive” electromagnets or solenoids designed for Magnetic Resonance Imaging (MRI) medical equipment

1. Maximum energy delivered during the discharge divided by the duration of the discharge of more than 500 kJ per minute; 2. Inner diameter of the current carrying windings of more than 250 mm; and 3. Rated for a magnetic induction of more than 8T or “overall current density” in the winding of more than 300 A/mm2; l. Circuits or systems for electromagnetic energy storage, containing components manufactured from “superconductive” materials specially designed for operation at temperatures below the “critical temperature” of at least one of their “superconductive” constituents, having all of the following: 1. Resonant operating frequencies exceeding 1 MHz; 2. A stored energy density of 1 MJ/m3 or more; and 3. A discharge time of less than 1 ms; m. Hydrogen/hydrogen-isotope thyratrons of ceramic-metal construction and rate for a peak current of 500 A or more; n. Ceramic frequency filters; o. Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are “space qualified” and not controlled by 3A001.e.4 (); p. Cermet trimmers.

X.A.I.002 General purpose “electronic assemblies”, modules and equipment.

a. Electronic test equipment, other than those specified in the CML or in Regulation (EU) 2021/821; b. Digital instrumentation magnetic tape data recorders having any of the following characteristics: 1. A maximum digital interface transfer rate exceeding 60 Mbit/s and employing helical scan techniques; 2. A maximum digital interface transfer rate exceeding 120 Mbit/s and employing fixed head techniques; or 3. “Space qualified”; c. Equipment, with a maximum digital interface transfer rate exceeding 60 Mbit/s, designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders; d. Non-modular analogue oscilloscopes having a bandwidth of 1 GHz or greater; e. Modular analogue oscilloscope systems having either of the following characteristics: 1. A mainframe with a bandwidth of 1 GHz or greater; or 2. Plug-in modules with an individual bandwidth of 4 GHz or greater; f. Analogue sampling oscilloscopes for the analysis of recurring phenomena with an effective bandwidth greater than 4 GHz; g. Digital oscilloscopes and transient recorders, using analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single-shot inputs at successive intervals of less than 1 ns (greater than 1 Giga Samples per Second (GSPS)), digitising to 8 bits or greater resolution and storing 256 or more samples. Note: X.A.I.002 controls the following specially designed components for analogue oscilloscopes: 1. Plug-in units; 2. External amplifiers; 3. Pre-amplifiers; 4. Sampling devices; 5. Cathode ray tubes.

X.A.I.003 Specific processing equipment, other than those specified in the CML or in Regulation (EU) 2021/821, as follows: a. Frequency changers and their specially designed components, other than those specified in the CML or in Regulation (EU) 2021/821; b. Mass spectrometers, other than those specified in the CML or in Regulation (EU) 2021/821; c. All flash X-ray machines, or components of pulsed power systems designed thereof, including Marx generators, high power pulse shaping networks, high voltage capacitors, and triggers; d. Pulse amplifiers, other than those specified in the CML or in Regulation (EU) 2021/821; e. Electronic equipment for time delay generation or time interval measurement, as follows: 1. Digital time delay generators with a resolution of 50 ns or less over time intervals of 1 μs or greater; or 2. Multi-channel (three or more) or modular time interval meter and chronometry equipment with resolution of 50 ns or less over time intervals of 1 μs or greater; f. Chromatography and spectrometry analytical instruments.

X.B.I.001 Equipment for the manufacture of electronic components or materials, as follows and specially designed components and accessories therefor: a. Equipment specially designed for the manufacture of electron tubes, optical elements and specially designed components therefor controlled by 3A001 () or X.A.I.001; b. Equipment specially designed for the manufacture of semiconductor devices, integrated circuits and “electronic assemblies”, as follows, and systems incorporating or having the characteristics of such equipment: Note: X.B.I.001.b. also controls equipment used or modified for use in the manufacture of other devices, such as imaging devices, electro-optical devices, acoustic-wave devices

1. Equipment for the processing of materials for the manufacture of devices and components as specified in the heading of X.B.I.001.b, as follows: Note: X.B.I.001 does not control quartz furnace tubes, furnace liners, paddles, boats (except specially designed caged boats), bubblers, cassettes or crucibles specially designed for the processing equipment controlled by X.B.I.001.b.1.

a. Equipment for producing polycrystalline silicon and materials controlled by 3C001 (); b. Equipment specially designed for purifying or processing III/V and II/VI semiconductor materials controlled by 3C001, 3C002, 3C003, 3C004, or 3C005 () except crystal pullers, for which see X.B.I.001.b.1.c below; c. Crystal pullers and furnaces, as follows: Note: X.B.I.001.b.1.c does not control diffusion and oxidation furnaces

1. Annealing or recrystallizing equipment other than constant temperature furnaces employing high rates of energy transfer capable of processing wafers at a rate exceeding 0,005 m2 per minute; 2. “Stored program controlled” crystal pullers having any of the following characteristics: a. Rechargeable without replacing the crucible container; b. Capable of operation at pressures above 2,5 x 105 Pa; or c. Capable of pulling crystals of a diameter exceeding 100 mm; d. “Stored program controlled” equipment for epitaxial growth having any of the following characteristics: 1. Capable of producing silicon layer with a thickness uniform to less than ±2,5 % across a distance of 200 mm or more; 2. Capable of producing a layer of any material other than silicon with a thickness uniformity across the wafer of equal to or better than ±3,5 %; or 3. Rotation of individual wafers during processing; e. Molecular beam epitaxial growth equipment; f. Magnetically enhanced “sputtering” equipment with specially designed integral load locks capable of transferring wafers in an isolated vacuum environment; g. Equipment specially designed for ion implantation, ion-enhanced or photo-enhanced diffusion, having any of the following characteristics: 1. Patterning capability; 2. Beam energy (accelerating voltage) exceeding 200 keV; 3. Optimised to operate at a beam energy (accelerating voltage) of less than 10 keV; or 4. Capable of high energy oxygen implant into a heated “substrate”; h. “Stored program controlled” equipment for the selective removal (etching) by means of anisotropic dry methods (e.g., plasma), as follows: 1. “Batch types” having either of the following: a. End-point detection, other than optical emission spectroscopy types; or b. Reactor operational (etching) pressure of 26,66 Pa or less; 2. “Single wafer types” having any of the following: a. End-point detection, other than optical emission spectroscopy types; b. Reactor operational (etching) pressure of 26,66 Pa or less; or c. Cassette-to-cassette and load locks wafer handling; Notes: 1. “Batch types” refers to machines not specially designed for production processing of single wafers. Such machines can process two or more wafers simultaneously with common process parameters, e.g., RF power, temperature, etch gas species, flow rates

2. “Single wafer types” refers to machines specially designed for production processing of single wafers. These machines may use automatic wafer handling techniques to load a single wafer into the equipment for processing. The definition includes equipment that can load and process several wafers but where the etching parameters, e.g., RF power or end point, can be independently determined for each individual wafer.

i. Chemical vapour deposition (CVD) equipment, e.g., plasma-enhanced CVD (PECVD) or photo-enhanced CVD, for semiconductor device manufacturing, having either of the following capabilities, for deposition of oxides, nitrides, metals or polysilicon: 1. Chemical vapour deposition equipment operating below 105 Pa; or 2. PECVD equipment operating either below 60 Pa or having automatic cassette-to-cassette and load lock wafer handling; Note: X.B.I.001.b.1.i does not control low pressure chemical vapour deposition (LPCVD) systems or reactive “sputtering” equipment.

j. Electron beam systems specially designed or modified for mask making or semiconductor device processing having any of the following characteristics: 1. Electrostatic beam deflection; 2. Shaped, non-Gaussian beam profile; 3. Digital-to-analogue conversion rate exceeding 3 MHz; 4. Digital-to-analogue conversion accuracy exceeding 12 bit; or 5. Target-to-beam position feedback control precision of 1 μm or finer; Note: X.B.I.001.b.1.j does not control electron beam deposition systems or general purpose scanning electron microscopes.

k. Surface finishing equipment for the processing of semiconductor wafers as follows: 1. Specially designed equipment for backside processing of wafers thinner than 100 μm and the subsequent separation thereof; or 2. Specially designed equipment for achieving a surface roughness of the active surface of a processed wafer with a two-sigma value of 2 μm or less, total indicator reading (TIR); Note: X.B.I.001.b.1.k does not control single-side lapping and polishing equipment for wafer surface finishing.

l. Interconnection equipment which includes common single or multiple vacuum chambers specially designed to permit the integration of any equipment controlled by X.B.I.001 into a complete system; m. “Stored program controlled” equipment using “lasers” for the repair or trimming of “monolithic integrated circuits” with either of the following characteristics: 1. Positioning accuracy less than ± 1 μm; or 2. Spot size (kerf width) less than 3 μm. Technical Note: For the purpose of X.B.I.001.b.1, “sputtering” is an overlay coating process wherein positively charged ions are accelerated by an electric field towards the surface of a target (coating material). The kinetic energy of the impacting ions is sufficient to cause target surface atoms to be released and deposited on the substrate. (Note: Triode, magnetron or radio frequency sputtering to increase adhesion of coating and rate of deposition are ordinary modifications of the process.) 2. Masks, mask substrates, mask-making equipment and image transfer equipment for the manufacture of devices and components as specified in the heading of X.B.I.001, as follows: Note: The term masks refers to those used in electron beam lithography, X-ray lithography, and ultraviolet lithography, as well as the usual ultraviolet and visible photo-lithography.

a. Finished masks, reticles and designs therefor, except: 1. Finished masks or reticles for the production of integrated circuits not controlled by 3A001 (); or 2. Masks or reticles, having both of the following characteristics: a. Their design is based on geometries of 2,5 μm or more; and b. The design does not include special features to alter the intended use by means of production equipment or “software”; b. Mask substrates as follows: 1. Hard surface (e.g., chromium, silicon, molybdenum) coated “substrates” (e.g., glass, quartz, sapphire) for the preparation of masks having dimensions exceeding 125 mm x 125 mm; or 2. Substrates specially designed for X-ray masks; c. Equipment, other than general purpose computers, specially designed for computer aided design (CAD) of semiconductor devices or integrated circuits; d. Equipment or machines, as follows, for mask or reticle fabrication: 1. Photo-optical step and repeat cameras capable of producing arrays larger than 100 mm x 100 mm, or capable of producing a single exposure larger than 6 mm x 6 mm in the image (i.e., focal) plane, or capable of producing line widths of less than 2,5 μm in the photoresist on the “substrate”; 2. Mask or reticle fabrication equipment using ion or “laser” beam lithography capable of producing line widths of less than 2,5 μm; or 3. Equipment or holders for altering masks or reticles or adding pellicles to remove defects; Note: X.B.I.001.b.2.d.1 and b.2.d.2 do not control mask fabrication equipment using photo-optical methods which was either commercially available before 1 January 1980, or has a performance no better than such equipment.

e. “Stored program controlled” equipment for the inspection of masks, reticles or pellicles with: 1. A resolution of 0,25 μm or finer; and 2. A precision of 0,75 μm or finer over a distance in one or two coordinates of 63,5 mm or more; Note: X.B.I.001.b.2.e does not control general purpose scanning electron microscopes except when specially designed and instrumented for automatic pattern inspection.

f. Align and expose equipment for wafer production using photo-optical or X-ray methods, e.g., lithography equipment, including both projection image transfer equipment and step and repeat (direct step on wafer) or step and scan (scanner) equipment, capable of performing any of the following functions: Note: X.B.I.001.b.2.f does not control photo-optical contact and proximity mask align and expose equipment or contact image transfer equipment