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X.A.I.001 Electronic devices and components.

a. “Microprocessor microcircuits”, “microcomputer microcircuits”, and microcontroller microcircuits having any of the following: 1. A performance speed of 5 GigaFLOPS or more and an arithmetic logic unit with an access width of 32 bit or more; 2. A clock frequency rate exceeding 25 MHz; or 3. More than one data or instruction bus or serial communication port that provides a direct external interconnection between parallel “microprocessor microcircuits” with a transfer rate of 2,5 Mbyte/s; b. Storage integrated circuits, as follows: 1. Electrically erasable programmable read-only memories (EEPROMs) with a storage capacity; a. Exceeding 16 Mbits per package for flash memory types; or b. Exceeding either of the following limits for all other EEPROM types: 1. Exceeding 1 Mbit per package; or 2. Exceeding 256 kbit per package and a maximum access time of less than 80 ns; 2. Static random access memories (SRAMs) with a storage capacity: a. Exceeding 1 Mbit per package; or b. Exceeding 256 kbit per package and a maximum access time of less than 25 ns; c. Analogue-to-digital converters having any of the following: 1. A resolution of 8 bit or more, but less than 12 bit, with an output rate greater than 200 Mega Samples Per Second (MSPS); 2. A resolution of 12 bit with an output rate greater than 105 Mega Samples per Second (MSPS); 3. A resolution of more than 12 bit but equal to or less than 14 bit with an output rate greater than 10 Mega Samples per Second (MSPS); or 4. A resolution of more than 14 bit with an output rate greater than 2,5 Mega Samples Per Second (MSPS); d. Field programmable logic devices having a maximum number of single-ended digital input/outputs between 200 and 700; e. Fast Fourier Transform (FFT) processors having a rated execution time for a 1 024 point complex FFT of less than 1 ms; f. Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: 1. More than 144 terminals; or 2. A typical basic propagation delay time of less than 0,4 ns; g. Traveling-wave “vacuum electronic devices”, pulsed or continuous wave, as follows: 1. Coupled cavity devices, or derivatives thereof; 2. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having any of the following: a. An “instantaneous bandwidth” of half an octave or more and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,2 ; or b. An “instantaneous bandwidth” of less than half an octave; and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,4 ; h. Flexible waveguides designed for use at frequencies exceeding 40 GHz; i. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having either of the following: 1. A carrier frequency exceeding 1 GHz; or 2. A carrier frequency of 1 GHz or less; and a. A “frequency side-lobe rejection” exceeding 55 dB; b. A product of the maximum delay time and bandwidth (time in μs and bandwidth in MHz) of more than 100; or c. A dispersive delay of more than 10 μs; Technical Note: For the purpose of X.A.I.001.i “Frequency side-lobe rejection” is the maximum rejection value specified in data sheet.

j. “Cells” as follows: 1. “Primary cells” having an “energy density” of 550 Wh/kg or less at 293 K (20 oC); 2. “Secondary cells” having an “energy density” of 350 Wh/kg or less at 293 K (20 oC); Note: X.A.I.001.j does not control batteries, including single cell batteries. Technical Notes: 1. For the purpose of X.A.I.001.j energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours (Ah) divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms

2. For the purpose of X.A.I.001.j, a “cell” is defined as an electrochemical device, which has positive and negative electrodes, and electrolyte, and is a source of electrical energy. It is the basic building block of a battery 3. For the purpose of X.A.I.001.j.1, a “primary cell” is a “cell” that is not designed to be charged by any other source 4. For the purpose of X.A.I.001.j.2, a “secondary cell” is a “cell” that is designed to be charged by an external electrical source.

k. “Superconductive” electromagnets or solenoids specially designed to be fully charged or discharged in less than one minute, having all of the following: Note: X.A.I.001.k does not control “superconductive” electromagnets or solenoids designed for Magnetic Resonance Imaging (MRI) medical equipment

1. Maximum energy delivered during the discharge divided by the duration of the discharge of more than 500 kJ per minute; 2. Inner diameter of the current carrying windings of more than 250 mm; and 3. Rated for a magnetic induction of more than 8T or “overall current density” in the winding of more than 300 A/mm2; l. Circuits or systems for electromagnetic energy storage, containing components manufactured from “superconductive” materials specially designed for operation at temperatures below the “critical temperature” of at least one of their “superconductive” constituents, having all of the following: 1. Resonant operating frequencies exceeding 1 MHz; 2. A stored energy density of 1 MJ/m3 or more; and 3. A discharge time of less than 1 ms; m. Hydrogen/hydrogen-isotope thyratrons of ceramic-metal construction and rate for a peak current of 500 A or more; n. Ceramic frequency filters; o. Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are “space qualified” and not controlled by 3A001.e.4 (); p. Cermet trimmers.

X.A.I.002 General purpose “electronic assemblies”, modules and equipment.

a. Electronic test equipment, other than those specified in the CML or in Regulation (EU) 2021/821; b. Digital instrumentation magnetic tape data recorders having any of the following characteristics: 1. A maximum digital interface transfer rate exceeding 60 Mbit/s and employing helical scan techniques; 2. A maximum digital interface transfer rate exceeding 120 Mbit/s and employing fixed head techniques; or 3. “Space qualified”; c. Equipment, with a maximum digital interface transfer rate exceeding 60 Mbit/s, designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders; d. Non-modular analogue oscilloscopes having a bandwidth of 1 GHz or greater; e. Modular analogue oscilloscope systems having either of the following characteristics: 1. A mainframe with a bandwidth of 1 GHz or greater; or 2. Plug-in modules with an individual bandwidth of 4 GHz or greater; f. Analogue sampling oscilloscopes for the analysis of recurring phenomena with an effective bandwidth greater than 4 GHz; g. Digital oscilloscopes and transient recorders, using analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single-shot inputs at successive intervals of less than 1 ns (greater than 1 Giga Samples per Second (GSPS)), digitising to 8 bits or greater resolution and storing 256 or more samples. Note: X.A.I.002 controls the following specially designed components for analogue oscilloscopes: 1. Plug-in units; 2. External amplifiers; 3. Pre-amplifiers; 4. Sampling devices; 5. Cathode ray tubes.

X.A.I.003 Specific processing equipment, other than those specified in the CML or in Regulation (EU) 2021/821, as follows: a. Frequency changers and their specially designed components, other than those specified in the CML or in Regulation (EU) 2021/821; b. Mass spectrometers, other than those specified in the CML or in Regulation (EU) 2021/821; c. All flash X-ray machines, or components of pulsed power systems designed thereof, including Marx generators, high power pulse shaping networks, high voltage capacitors, and triggers; d. Pulse amplifiers, other than those specified in the CML or in Regulation (EU) 2021/821; e. Electronic equipment for time delay generation or time interval measurement, as follows: 1. Digital time delay generators with a resolution of 50 ns or less over time intervals of 1 μs or greater; or 2. Multi-channel (three or more) or modular time interval meter and chronometry equipment with resolution of 50 ns or less over time intervals of 1 μs or greater; f. Chromatography and spectrometry analytical instruments.

X.B.I.001 Equipment for the manufacture of electronic components or materials, as follows and specially designed components and accessories therefor: a. Equipment specially designed for the manufacture of electron tubes, optical elements and specially designed components therefor controlled by 3A001 () or X.A.I.001; b. Equipment specially designed for the manufacture of semiconductor devices, integrated circuits and “electronic assemblies”, as follows, and systems incorporating or having the characteristics of such equipment: Note: X.B.I.001.b. also controls equipment used or modified for use in the manufacture of other devices, such as imaging devices, electro-optical devices, acoustic-wave devices

3. Equipment for the assembly of integrated circuits, as follows: a. “Stored program controlled” die bonders having all of the following characteristics: 1. Specially designed for “hybrid integrated circuits”; 2. X-Y stage positioning travel exceeding 37,5 x 37,5 mm; and 3. Placement accuracy in the X-Y plane of finer than ± 10 μm; b. “Stored program controlled” equipment for producing multiple bonds in a single operation (e.g., beam lead bonders, chip carrier bonders, tape bonders); c. Semi-automatic or automatic hot cap sealers, in which the cap is heated locally to a higher temperature than the body of the package, specially designed for ceramic microcircuit packages controlled by 3A001 () and that have a throughput equal to or more than one package per minute. Note: X.B.I.001.b.3 does not control general purpose resistance type spot welders

4. Filters for clean rooms capable of providing an air environment of 10 or less particles of 0,3 μm or smaller per 0,02832 m3 and filter materials therefor. Technical Note: For the purpose of X.B.I.001, “stored program controlled” is a control using instructions stored in an electronic storage that a processor can execute in order to direct the performance of predetermined functions. Equipment may be “stored program controlled” whether the electronic storage is internal or external to the equipment.

X.B.I.002 Equipment for the inspection or testing of electronic components and materials, and specially designed components and accessories therefor.

a. Equipment specially designed for the inspection or testing of electron tubes, optical elements and specially designed components therefor controlled by 3A001 () or X.A.I.001; b. Equipment specially designed for the inspection or testing of semiconductor devices, integrated circuits and “electronic assemblies”, as follows, and systems incorporating or having the characteristics of such equipment: Note: X.B.I.002.b also controls equipment used or modified for use in the inspection or testing of other devices, such as imaging devices, electro-optical devices, acoustic-wave devices 1. “Stored program controlled” inspection equipment for the automatic detection of defects, errors or contaminants of 0,6 μm or less in or on processed wafers, substrates, other than printed circuit boards or chips, using optical image acquisition techniques for pattern comparison; Note: X.B.I.002.b.1 does not control general purpose scanning electron microscopes, except when specially designed and instrumented for automatic pattern inspection

3. “Stored program controlled” wafer probing equipment having any of the following characteristics: a. Positioning accuracy finer than 3,5 μm; b. Capable of testing devices having more than 68 terminals; or c. Capable of testing at a frequency exceeding 1 GHz; 4. Test equipment as follows: a. “Stored program controlled” equipment specially designed for testing discrete semiconductor devices and unencapsulated dice, capable of testing at frequencies exceeding 18 GHz; Technical Note: Discrete semiconductor devices include photocells and solar cells.

b. “Stored program controlled” equipment specially designed for testing integrated circuits and “electronic assemblies” thereof, capable of functional testing: 1. At a “pattern rate” exceeding 20 MHz; or 2. At a “pattern rate” exceeding 10 MHz but not exceeding 20 MHz and capable of testing packages of more than 68 terminals. Notes: X.B.I.002.b.4.b does not control test equipment specially designed for testing: 1. Memories; 2. Assemblies or a class of “electronic assemblies” for home and entertainment applications; and 3. Electronic components, “electronic assemblies” and integrated circuits not controlled by 3A001 ()or X.A.I.001 provided such test equipment does not incorporate computing facilities with “user accessible programmability”. Technical Note: For purposes of X.B.I.002.b.4.b, “pattern rate” is defined as the maximum frequency of digital operation of a tester. It is therefore equivalent to the highest data rate that a tester can provide in non-multiplexed mode. It is also referred to as test speed, maximum digital frequency or maximum digital speed.

c. Equipment specially designed for determining the performance of focal-plane arrays at wavelengths of more than 1 200 nm, using “stored program controlled” measurements or computer aided evaluation and having any of the following characteristics: 1. Using scanning light spot diameters of less than 0,12 mm; 2. Designed for measuring photosensitive performance parameters and for evaluating frequency response, modulation transfer function, uniformity of responsivity or noise; or 3. Designed for evaluating arrays capable of creating images with more than 32 x 32 line elements; 5. Electron beam test systems designed for operation at 3 keV or below, or “laser” beam systems, for non-contactive probing of powered-up semiconductor devices having any of the following: a. Stroboscopic capability with either beam blanking or detector strobing; b. An electron spectrometer for voltage measurements with a resolution of less than 0,5 V; or c. Electrical tests fixtures for performance analysis of integrated circuits; Note: X.B.I.002.b.5 does not control scanning electron microscopes, except when specially designed and instrumented for non-contactive probing of a powered-up semiconductor device